Bipolar transistor and method of manufacturing the same

Details Bipolar transistor and method of manufacturing the same Bipolar transistor and method of manufacturing the same

1990-03-22

1991-09-17

Carroll, J.

357 59, 357 71, H01L 2972, H01L 2904, H01L 2348

Patent

active

050499645

ABSTRACT:
A bipolar transistor includes collector, base and emitter regions. The collector region consists of a first semiconductor region of a first conductivity type and formed in contact with a surface of a semiconductor layer. The base region consists of a second semiconductor region of a second conductivity type formed within the collector region to be in contact with the surface of the semiconductor layer. The emitter region consists of a third semiconductor region of the first conductivity type formed within the base region to be in contact with the surface of the semiconductor layer. The transistor also includes collector, base, and emitter electrodes. The collector and base electrodes are connected to the collector and base regions at opposite edges of a single opening formed in a field insulating film covering the surface of the semiconductor layer. The collector and base electrodes consist of a conductor. The emitter electrode is connected to the emitter region and consists of a conductor. The transistor further includes first and second insulating interlayers. The first insulating interlayer is formed between the collector and emitter electrodes. The second insulating interlayer is formed between the emitter and base electrodes. A distance between the collector and emitter electrodes on the surface of the semiconductor layer is substantially the same as that between the emitter and base electrodes.

REFERENCES:
patent: 4485551 (1984-12-01), Soclof
patent: 4641170 (1987-02-01), Ogura et al.
patent: 4920401 (1990-04-01), Sakai et al.

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