Bipolar transistor and method of manufacturing the same

Details Bipolar transistor and method of manufacturing the same Bipolar transistor and method of manufacturing the same

1987-10-30

1991-02-05

Hille, Rolf

357 237, 357 35, 357 44, 357 59, 357 71, H01L 2972, H01L 2701, H01L 2702, H01L 2904

Patent

active

049909916

ABSTRACT:
Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a biolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.

REFERENCES:
patent: 4546536 (1985-10-01), Anantha et al.
patent: 4586968 (1986-05-01), Coello-Vera
patent: 4703554 (1987-11-01), Havemann
patent: 4922315 (1990-05-01), Vu
Rodder et al., "Silicon-on-Insulator Bipolar Transistors", IEEE Electron Device Letters, vol. EDL-4, No. 6, Jun. 1983, 193-195.
IEEE Electron Device Letters, vol. EDL-4, No. 8, Aug. 1983, pp. 269-271, "Fully Isolated Lateral Bipolar-MOS Transistors Fabricated in Zone-Melting-Recrystallized Si Films on SiO.sub.2 ".

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