Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2011-01-04
2011-01-04
Nguyen, Kimberly D (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S565000
Reexamination Certificate
active
07863644
ABSTRACT:
NPN and PNP bipolar junction transistors are formed on a wafer in a fabrication process that eliminates the heavily-doped buried layers and the lightly-doped epitaxial layer by forming back side collector contacts that are electrically connected to an interconnect structure on the top side of the wafer with through-the-wafer contacts.
REFERENCES:
patent: 6249136 (2001-06-01), Maley
patent: 6657242 (2003-12-01), Norstrom et al.
patent: 6677235 (2004-01-01), Yegnashankaran et al.
patent: 7075133 (2006-07-01), Padmanabhan et al.
patent: 7132321 (2006-11-01), Kub et al.
patent: 7141875 (2006-11-01), Hsuan et al.
patent: 2006/0131693 (2006-06-01), Kim
patent: 2007/0145533 (2007-06-01), Ahlgren et al.
patent: 2007/0190692 (2007-08-01), Erturk et al.
patent: 2007/0275533 (2007-11-01), Vaed et al.
Lin Hengyang
Yegnashankaran Visvamohan
Choudhry Mohammad
National Semiconductor Corporation
Nguyen Kimberly D
Pickering Mark C.
LandOfFree
Bipolar transistor and method of forming the bipolar... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bipolar transistor and method of forming the bipolar..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor and method of forming the bipolar... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2736532