Bipolar transistor and method of forming the bipolar...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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C257S565000

Reexamination Certificate

active

07863644

ABSTRACT:
NPN and PNP bipolar junction transistors are formed on a wafer in a fabrication process that eliminates the heavily-doped buried layers and the lightly-doped epitaxial layer by forming back side collector contacts that are electrically connected to an interconnect structure on the top side of the wafer with through-the-wafer contacts.

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patent: 6677235 (2004-01-01), Yegnashankaran et al.
patent: 7075133 (2006-07-01), Padmanabhan et al.
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patent: 7141875 (2006-11-01), Hsuan et al.
patent: 2006/0131693 (2006-06-01), Kim
patent: 2007/0145533 (2007-06-01), Ahlgren et al.
patent: 2007/0190692 (2007-08-01), Erturk et al.
patent: 2007/0275533 (2007-11-01), Vaed et al.

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