Bipolar transistor and method of fabricating the same

Details Bipolar transistor and method of fabricating the same Bipolar transistor and method of fabricating the same

2011-03-15

2011-03-15

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S359000, C257S526000

Reexamination Certificate

active

07906403

ABSTRACT:
Consistent with an example embodiment, there is a bipolar transistor with a reduced collector series resistance integrated in a trench of a standard CMOS shallow trench isolation region. The bipolar transistor includes a collector region manufactured in one fabrication step, therefore having a shorter conductive path with a reduced collector series resistance, improving the high frequency performance of the bipolar transistor. The bipolar transistor further includes a base region with a first part on a selected portion of the collector region (6, 34), which is on the bottom of the trench, and an emitter region on a selected portion of the first part of the base region. A base contact electrically contacts the base region on a second part of the base region, which is on an insulating region. The collector region is electrically contacted on top of a protrusion with a collector contact.

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