Bipolar transistor and method for manufacturing the same

Details Bipolar transistor and method for manufacturing the same Bipolar transistor and method for manufacturing the same

1990-06-05

1992-02-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437151, 437152, 437162, 148DIG10, 357 35, H01L 21266, H01L 2706, H01L 2710

Patent

active

050860054

ABSTRACT:
In a self-alignment type-lateral bipolar transistor and a manufacturing method thereof, the base width is determined not by the image resolution limit of the lithography technique, as in the prior art, but by the impurity diffusion from the polysilicon layer 118. Therefore, the self-alignment type lateral-structure pnp bipolar transistor and the manufacturing method permit the base width to be as small as possible, resulting in improvement of frequency characteristics, and reducing the size of the transistor element.

REFERENCES:
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patent: 3967307 (1976-06-01), Muller et al.
patent: 4381953 (1983-05-01), Ho et al.
patent: 4419685 (1983-12-01), Sugawara et al.
patent: 4569123 (1986-02-01), Ishii et al.
patent: 4738624 (1988-04-01), Iyes et al.
patent: 4782030 (1988-11-01), Katsumata et al.
patent: 4979008 (1990-12-01), Siligoni et al.

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