Bipolar transistor and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure

Reexamination Certificate

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C257S587000, C257S198000

Reexamination Certificate

active

07148557

ABSTRACT:
A bipolar transistor includes: a first semiconductor layer having an intrinsic base region and an extrinsic base region; and a second semiconductor layer having a portion located on the intrinsic base region to be an emitter region or a collector region. A capacitive film is provided on the extrinsic base region using the same semiconductor material as that for the second semiconductor layer. A base electrode is formed on the first semiconductor layer to cover the capacitive film and the extrinsic base region.

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patent: 5608353 (1997-03-01), Pratt
patent: 5629648 (1997-05-01), Pratt
patent: 5760457 (1998-06-01), Mitsui et al.
patent: 5861640 (1999-01-01), Gomi
patent: 6462362 (2002-10-01), Miyoshi
patent: 6593604 (2003-07-01), Ishimaru
patent: 6936871 (2005-08-01), Hase
patent: 2004/0041235 (2004-03-01), Yanagihara et al.
patent: 08-279561 (1996-10-01), None
American Heritage Dictionary, Second College Edition (1982), p. 872.

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