Bipolar transistor and method for fabricating it

Details Bipolar transistor and method for fabricating it Bipolar transistor and method for fabricating it

2006-06-20

2006-06-20

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S201000, C438S312000

Reexamination Certificate

active

07064360

ABSTRACT:
A method is provided to fabricate a bipolar transistor with a low base connection resistance, low defect density and improved scalability. Scalability is to be understood in this case as both the lateral scaling of the emitter window and the vertical scaling of the base width (low temperature budget). The temperature budget can be kept low in the base region since no implantations are required in order to reduce the base connection resistance. Furthermore, the difficulties associated with the point defects are largely avoided.

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