Bipolar transistor and manufacturing method for same

Details Bipolar transistor and manufacturing method for same Bipolar transistor and manufacturing method for same

1998-12-21

2000-11-14

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257587, H01L 31072

Patent

active

061473715

ABSTRACT:
In an element intrinsic region 12 of a bipolar transistor, an emitter is formed by two emitter layers 31,32 so as to reduce the potential barrier presented to minority carriers, this resulting in a smooth flow of minority carriers that are injected into the base layer from the emitter, and in the element external region 13, the emitter layer 32 that acts to reduce the potential barrier to injected minority carriers is removed, thereby suppressing the injection of minority carriers from the emitter layer 31 into the base layer.

REFERENCES:
patent: 4958208 (1990-09-01), Tanaka
patent: 5147775 (1992-09-01), Ota et al.
patent: 5289020 (1994-02-01), Hirose et al.
patent: 5329145 (1994-07-01), Nakagawa
patent: 5508536 (1996-04-01), Twynam et al.

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