Bipolar transistor and its manufacturing method

Details Bipolar transistor and its manufacturing method Bipolar transistor and its manufacturing method

1997-01-24

2000-03-28

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257592, H01L 27082

Patent

active

060435542

ABSTRACT:
A p+ type graft base layer is formed both in a base layer of a p type epitaxial layer in a base opening of an insulating layer formed on a collector layer of an n type epitaxial layer and on an upper layer of the n type epitaxial layer contacting the p type epitaxial layer so that the graft base layer is positioned near the edge of the base opening, whereby a pn junction is formed away from the edge of the base opening where crystallinity of the p type epitaxial layer is deteriorated.

REFERENCES:
patent: 5789800 (1998-08-01), Kohno

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