Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming base region of specified dopant concentration profile
Reexamination Certificate
2005-09-06
2005-09-06
Lee, Eddie (Department: 2811)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Forming base region of specified dopant concentration profile
C438S936000, C438S235000, C438S309000, C438S312000, C257S191000, C257S197000, C257S200000, C257S592000
Reexamination Certificate
active
06939772
ABSTRACT:
A SiGe spacer layer151,a graded SiGe base layer152including boron, and an Si-cap layer153are sequentially grown through epitaxial growth over a collector layer102on an Si substrate. A second deposited oxide film112having a base opening portion118and a P+ polysilicon layer115that will be made into an emitter connecting electrode filling the base opening portion are formed on the Si-cap layer153,and an emitter diffusion layer153ais formed by diffusing phosphorus into the Si-cap layer153.When the Si-cap layer153is grown, by allowing the Si-cap layer153to include boron only at the upper part thereof by in-situ doping, the width of a depletion layer154is narrowed and a recombination current is reduced, thereby making it possible to improve the linearity of the current characteristics.
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Asai Akira
Ohnishi Teruhito
Takagi Takeshi
Gebremariam Samuel A.
Lee Eddie
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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