Bipolar transistor and fabrication method of the same

Details Bipolar transistor and fabrication method of the same Bipolar transistor and fabrication method of the same

2007-11-20

2007-11-20

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000, C257SE29185, C257SE29188, C257SE29189, C438S235000, C438S309000, C438S312000

Reexamination Certificate

active

11179404

ABSTRACT:
A bipolar transistor having a base electrode of an air bridge structure is simplified in structure and enhanced in the degree of freedom of a contact position of a base wiring line with the base electrode. The bipolar transistor has a semiconductor mesa portion having a base layer formed on an upper face thereof, and a base electrode contacts with the base layer and has a floating extension which extends from the semiconductor mesa portion to a space on the outer side with respect to the semiconductor mesa portion. The floating extension is used as a contact portion for a base wiring line to the base electrode.

REFERENCES:
patent: 6600179 (2003-07-01), Quaglietta et al.
patent: 2001/0015474 (2001-08-01), Blayac et al.
patent: 2004/0238843 (2004-12-01), Sawdai et al.
patent: 2726125 (1996-04-01), None

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