Bipolar transistor and CMOS transistor logic circuit having impr

Details Bipolar transistor and CMOS transistor logic circuit having impr Bipolar transistor and CMOS transistor logic circuit having impr

1988-04-08

1989-11-14

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307451, H03K 1704

Patent

active

048809985

ABSTRACT:
The present invention provides a logic circuit which is formed by combination of bipolar transistors and CMOS transistors such that conduction of the bipolar transistors is controlled by the MOS transistors and an output load is charged/discharged by the conducting bipolar transistors. A logic part formed by combination of at least one or more NMOS transistors is provided between an output terminal and a low-potential power source, so that fall of output voltage in discharging is prompted by addition of discharge path through the logic part.

REFERENCES:
patent: 4703203 (1987-10-01), Gallup et al.
patent: 4719370 (1988-01-01), Sugimoto
patent: 4769561 (1988-09-01), Iwamura et al.
NIKKEI ELECTRONICS 1985.8.12, "Bipolar Transistor and CMOS Transistor are . . . ", pp. 187-208.
ICCD 1984 Digest Paper, "A Subnanosecond Low Power Advanced Bipolar--CMOS Gate Array", Yoji Nishio et al., pp. 428-433.

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