Bipolar transistor and a method of manufacturing the same

Details Bipolar transistor and a method of manufacturing the same Bipolar transistor and a method of manufacturing the same

2007-08-14

2007-08-14

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S571000, C257S586000, C257S623000, C257SE21387, C257SE29044

Reexamination Certificate

active

10833142

ABSTRACT:
A bipolar transistor having enhanced characteristics is fabricated by etching a base mesa, which is formed below an emitter mesa (upper emitter layer) and a base electrode, so as to have jut regions on the edges of its generally rectangular region. A mask film, e.g., insulating film, is formed to cover the rectangular region and jut regions, and the base layer is etched by use of the insulating film as a mask to form a base mesa. Consequently, abnormal etching can be prevented from occurring along the base electrode and emitter mesa on the edges of the area where the base electrode and emitter mesa confront each other, and an increase in resistance between the base layer and the emitter layer can be prevented, whereby the bipolar transistor can have enhanced characteristics.

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patent: 2001-230261 (2001-08-01), None

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