Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1995-08-16
1996-09-03
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257198, H01L 2973, H01L 2910
Patent
active
055526179
ABSTRACT:
A bipolar transistor includes a passivating layer of material 40 in the base structure 42 that serves to cover the extrinsic base region of the transistor. The passivating layer 40 is formed of a material having a wider bandgap than the base layer 44, and is heavily doped with the same doping type (n or p) as the base layer. The invention is advantageous in that the base contacts 48 of the device are made directly to the passivating layer 40 and are not in direct contact with the base layer 44. This eliminates the need for alloyed contacts and the concomitant reliability problems associated with spiking contacts. In addition, the invention is completely compatible with self-aligned production techniques.
REFERENCES:
patent: 5330932 (1994-07-01), Liu et al.
Malik, et al., "Submicron Scaling of AlGaAs/GaAs Self-Aligned Thin Emitter Heterojunction Bipolar Transistors (SATE-HBT) with Current Gain Independent of Emitter Area," Electronics Letters, vol. 25, No. 17, Aug. 17, 1989, pp. 1175-1177.
Tiwari, et al., "Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar Transistors," J. Appl. Phys., vol. 64, No. 10, Nov. 15, 1988, pp. 5009-5013.
Nakajima, et al., "Emitter-Base Junction Size Effect on Current Gain H.sub.fe of AlGaAs/GaAs Heterojunction Bipolar Transistors," Japanese Journal of Applied Physics, vol. 24, No. 8, Aug., 1985, pp. L596-L598.
Chau Hin-Fai
Costa Damian
Fan Shou-Kong
Henderson Timothy S.
Hill Darrell G.
Donaldson Richard L.
Kesterson James C.
Monin, Jr. Donald L.
Skrehot Michael K.
Texas Instruments Incorporated
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