1991-05-30
1992-01-28
Carroll, J.
357 34, 357 68, H01L 2972, H01L 2348
Patent
active
050847511
ABSTRACT:
A bipolar transistor of a multi-emitter construction comprises a base diffusion layer formed in a substrate, a number of emitter diffusion layers formed in the base diffusion layer and arranged in a two-dimensional pattern, a base electrode film formed on the base diffusion layer, the base electrode film having a branch connection portion of a mesh-like shape surrounding each group consisting of at least one of the emitter diffusion layers, the base electrode film also having a main connection portion connected to said branch connection portion, and emitter electrode films formed respectively on said emitter electrode layers.
REFERENCES:
patent: 3461357 (1969-08-01), Mutter et al.
patent: 3567506 (1971-03-01), Belarde
patent: 4161740 (1979-07-01), Frey
Imaeda Yasuo
Iwata Hitoshi
Jinkai Koichi
Kinoshita Ken-ichi
Carroll J.
Kabushiki Kaisha Tokai Rika Denki Seisakusho
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