Bipolar transistor

Details Bipolar transistor Bipolar transistor

1981-06-15

1983-07-05

Edlow, Martin H.

357 50, 357 59, 357 91, H01L 2712

Patent

active

043921493

ABSTRACT:
Disclosed is a self-aligned process for providing an improved bipolar transistor structure.
The process includes the chemically etching of an intermediate insulating layer to undercut another top layer of a different insulating material in a self-aligned emitter process wherein the spacing of the emitter contact to the polysilicon base contact is reduced to a magnitude of approximately 0.2 to 0.3 micrometers. In addition, in the process an emitter plug is formed to block the emitter region from the heavy P+ ion dose implant of the extrinsic base.

REFERENCES:
patent: 4236294 (1980-12-01), Anantha

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