Bipolar transistor

Details Bipolar transistor Bipolar transistor

1989-02-13

1991-02-19

Hille, Rolf

357 35, H01L 2972

Patent

active

049948814

ABSTRACT:
An improved bipolar transistor is a vertical type bipolar transistor the base region of which is composed of a graft base region, an intrinsic base region separated from the graft base region and having an emitter region in its inside, and a link impurity diffusion region linking these regions. In the preparation, the graft base region is formed by diffusion of impurities from the base contact electrode layer and the emitter region formed in the intrinsic base region may be formed in self-alignment. In the vicinity of the junction between the base region and the semiconductor substrate, there is formed a diffusion suppression region composed of an impurity diffusion region of a conductivity type opposite to the conductivity type of the base region and adapted for preventing the depth of junction from being increased.

REFERENCES:
patent: 4706378 (1987-11-01), Havemann
patent: 4755476 (1988-07-01), Bohm
Japanese Patent Abstracts of Japan, vol. 11, No. 190 (E-517) (2637) Jun. 18, 1987, 62-17763.
Japanese Patent Abstract of Japan, vol. 10, No. 117 (E-400) 2174, May 2, 1986.

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