1992-02-18
1992-09-15
Wojciechowicz, Edward J.
357 54, 357 59, 357 55, H01L 2972
Patent
active
051482525
ABSTRACT:
A bipolar transistor includes a p-type external base region formed on the major surface of an n-type semiconductor substrate, a plurality of p-type internal base regions formed to be surrounded by the external base region, and emitter regions of a first conductivity type respectively formed in the internal base regions. An oxide film and a nitride film, stacked on each other, extend outward from an outer peripheral portion of the external base region on the major surface of the semiconductor substrate, and define openings therein. A p-type semiconductor film is formed on the external base region in the openings. A first conductive layer having a p-type semiconductor is formed on the nitride film and the semiconductor film. Side-wall-like oxide films are formed on side wall portions, of the semiconductor film and the first conductive layer, opposite to the emitter regions. A second conductive layer having an n-type semiconductor and serving as an emitter electrode extraction portion is formed on the side-wall-like oxide films to be in contact with the emitter regions.
REFERENCES:
patent: 4996581 (1991-02-01), Hamasaki
patent: 5001533 (1991-03-01), Yamaguchi
Kabushiki Kaisha Toshiba
Wojciechowicz Edward J.
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