Bipolar transistor

Details Bipolar transistor Bipolar transistor

2009-11-02

2011-11-15

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to increase current gain or operating frequency

C257S592000, C257S566000, C257SE29184, C438S342000, C438S350000

Reexamination Certificate

active

08058704

ABSTRACT:
A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.

REFERENCES:
patent: 5422299 (1995-06-01), Neudeck et al.
patent: 5892264 (1999-04-01), Davis et al.
patent: 2004/0048428 (2004-03-01), Tanomura
patent: 2004/0207046 (2004-10-01), Babcock et al.
patent: 2006/0076645 (2006-04-01), Algotsson et al.
patent: 2007/0001262 (2007-01-01), Ouyang et al.
patent: 1643549 (2006-04-01), None
patent: WO 9107779 (1991-05-01), None
PCT International Search Report of May 10, 2011 for International Application No. PCT/US2010/054998, filed Nov. 1, 2010. 12 Pages.

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