Bipolar transistor

Details Bipolar transistor Bipolar transistor

1998-07-16

2000-07-11

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, H01L 31072, H01L 31109, H01L 27082

Patent

active

060876840

ABSTRACT:
A heterojunction bipolar transistor (HBT) has shortened electron transport time through collector region over wide range of biased conditions. The HBT is expected to exhibit enhanced high frequency characteristics. In operation under biased condition, a portion of an n-GaAs collector layer makes a depletion region. A p-GaAs base contact layer is in contact with side surface of the depletion region. Even if the collector layer remains in the n-type, the contour of band potential in conduction band of the collector depletion region is adjusted to a desired one by controlling electric potential of the base contact layer. As a result, the band potential with smooth slope is created in the collector depletion region, shortening transport time through the collector layer. The intrinsic portion of the collector layer is of the n-type so that occurrence of Kirk effect is suppressed, ensuring enhanced high frequency characteristics.

REFERENCES:
patent: 4929997 (1990-05-01), Honjo et al.
patent: 5160994 (1992-11-01), Shimawaki
patent: 5329144 (1994-07-01), Larye
patent: 5494836 (1996-02-01), Imai
patent: 5506427 (1996-04-01), Imai
patent: 5552617 (1996-09-01), Hill et al.

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