Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2004-10-20
2008-03-18
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S197000, C257S201000, C257SE29188, C257SE29189
Reexamination Certificate
active
07345327
ABSTRACT:
A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.
REFERENCES:
patent: 4518979 (1985-05-01), Dumke et al.
patent: 5371389 (1994-12-01), Matsuno et al.
patent: 5429957 (1995-07-01), Matsuno et al.
patent: 5571732 (1996-11-01), Liu
patent: 5606185 (1997-02-01), Nguyen et al.
patent: 5814843 (1998-09-01), Ohkubo
patent: 5858818 (1999-01-01), Ro et al.
patent: 5903018 (1999-05-01), Shimawaki
patent: 6031256 (2000-02-01), Liu et al.
patent: 6150667 (2000-11-01), Ishizaka et al.
patent: 6150677 (2000-11-01), Tanaka et al.
patent: 6285044 (2001-09-01), Bhat
patent: 6696711 (2004-02-01), Mochizuki et al.
patent: 6750480 (2004-06-01), Welser et al.
patent: 6765242 (2004-07-01), Chang et al.
patent: 6847060 (2005-01-01), Welser et al.
patent: 2001/0040244 (2001-11-01), Fitzgerald et al.
patent: 2002/0027232 (2002-03-01), Shigematsu et al.
patent: 2002/0102847 (2002-08-01), Sharps et al.
patent: 2005/0020033 (2005-01-01), Specht et al.
patent: 2005/0064672 (2005-03-01), Welser et al.
patent: 2005/0158942 (2005-07-01), Welser et al.
patent: 2006/0081963 (2006-04-01), Rehder et al.
patent: 2 795 871 (2001-01-01), None
patent: 11312685 (1999-11-01), None
patent: WO 01/03194 (2001-01-01), None
patent: WO 02/43155 (2002-05-01), None
“InGaP/InGaAsN/GaAs NPN double heterojunction bipolar transistor”,pp. 2262-2264 Feb. 2000, Chang et al.
“High Speed InGaP/GaAs HBT's with a strained InGaAs base” pp. 226-228, May 1996, Ahmari et al.
“Determination of band gap narrowing and hole density for heavily C-doped GaAs by photoluminescence spectroscopy” pp. 88-90, Jan. 1994, Lu et al.
Chang, et al., “InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor,”Applied Physics Letters, 79(19):2788-2790 (2000).
Welser, et al., “Low VbeGaInAsN Base Heterojunction Bipolar Transistors,”IEICE Trans. Electron., E84-C(10): 1389-1393 (2001).
Li, et al., “DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs,”Electronics Letters, 36(1): 81-83 (2000).
Kohama, et al., “Using Carbon Tetrachloride for Carbon Doping AlxGa1−xAs Grown by Metalorganic Chemical Vapor Deposition,”Jpn. J. Appl. Phys., 34(7A): 3504-3505 (1995).
Sugiura, et al., “Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide,”Applied Physics Letters, 73(12):2482-2484 (1998).
Bhat, et al., “Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition,”Journal of Crystal Growth, 195: 427-437 (1998).
Welser, R.E., et al., “Role of Neutral Base Recombination in High Gain AlGaAs/GaAs HBT's,”IEEE Transactions on Electron Devices, 46(8):1599-1607(1999).
Chang, P.C., et al., “InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor,”Appl. Phys. Lett., 76(16):2262-2264(2000).
Ahmari, D.A., et al., “High-speed InGaP/GaAs HBT's with a Strained InxGa1−xAs Base,”IEEE Electron Device Letters,17(5):226-228(1996).
Welser, R.E., et al., “Turn-on Voltage Investigation of GaAs-Based Bipolar Transistors with Ga1−xInxAs1−yNyBase Layers,”IEEE Electron Device Letters, 21(12):1-4(2000).
Low, T., et al., “InGaP HBT technology for RF and microwave instrumentation,”Solid-State Electronics, 43:1437-1444(1999).
Liu, W., et al., “Current Transport Mechanism in GaInP/GaAs Heterojunction Bipolar Transistors,”IEEE Transactions on Electron Devices, 40(8):1378-1383(1993).
Lu, Z.H., et al., “Determination of band gap narrowing and hole density for heavily C-doped GaAs by photoluminescence,”Appl. Phys. Lett., 64(1): 88-90(1994).
Welser, R.E., et al., “High Performance Al0.35Ga0.65As/GaAs HBT's,”IEEE Electron Device Letters, 21(5):196-199(2000).
Welser, R.E., et al., “Base Current Investigation of the Long-Term Reliability of GaAs-Based HBTs,”GaAs Mantech, (2000).
Patton, G.L., et al. “Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors,”IEEE Electron Device Letters, 10(12):534-536(1989).
Ida, M., et al., “InP/InGaAs DHBTs with 341-Ghz fTat high current density of over 800 κA/cm2,”IEEE, (2001).
Kroemer, H., “Heterostructure bipolar transistors: What should we build?”J. Vac. Sci. Technol., B1(2):126-130(1983).
Fujihara, A., et al., “High-speed InP/InGaAs DHBTs with Ballistic Collector Launcher Structure,”IEEE, (2001).
Nakahara, K., et al., “Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser,”Electronic Letters, 32(17): 1585-1586(1996).
Mochizuki, K., et al., “GaInP/GaAs Collector-Up Tunneling-Collector Heterojunction Bipolar Transistors (C-Up TC-HBTs): Optimization of Fabrication Process and Epitaxial Layer Structure for High-Efficiency High-Power Amplifiers,”Transactions on Electron Devices, 47(12):2277-2283(2000).
Pan N., et al., “Pseudomorphic In-Graded Carbon Doped GaAs Base Heterojunction Bipolar Transistors by Metal Organic Chemical Vapor Deposition,”Journal of Electronic Materials, 25(7):13 (1996).
Ohkubo, M., et al., “Compositionally Graded C-doped In1−xGaxAs Base in InP/InGaAs D-HBTs Grown by MOCVD with Low Base Sheet Resistance and High Current Gain”,IEEE, pp. 641-644, 1997.
Stockman, S. A., et al., “Carbon Doping of InxGa1−xAs By MOCVD Using CCI4”, pp. 40-43, no date given.
Keiper, D., et al., “Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N2Ambient”, XP-001030248,Jpn. J. Appl. Phys., vol. 39:6162-6165 (2000).
Stillman, G. E., et al., “Carbon-doped InGaAs grown by MOCVD for InP/InGaAs heterojunction bipolar transistors”,Inst. Phys. Conf. Ser. No. 129:687-692 (1992).
Kroemer, H., “Two Integral Relations Pertaining to the Electron Transport Through a Bipolar Transistor With a Nonuniform Energy Gap in the Base Region,”Solid-State Electronic, 28(11):1101-1103 (1985).
Maziar, C. M., et al., “On the Estimation of Base Transit Time in AlGaAs/GaAs Bipolar Transistors,”IEEE Electron Device Lett. 8:90-91 (1987).
Stockman, S. A., et al., “Growth of carbon-doped p-type InxGa1−xAs (0<x≦0.53) by metalorganic chemical vapor deposition,”Appl. Phys. Lett60(23):2903-2905 (1992).
DeLuca Paul M.
Lutz Charles R.
Pan Noren
Stevens Kevin S.
Welser Roger E.
Hamilton Brook Smith & Reynolds P.C.
Kopin Corporation
Mandala Jr. Victor A.
Pert Evan
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