Bipolar transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means

Reexamination Certificate

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C257S584000, C257S591000

Reexamination Certificate

active

10521106

ABSTRACT:
A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance.

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Lurng Shehng Lee et al., “Argon Ion-Implantation on Polysilicon or Amorphous-Silicon for Boron Penetration Suppression in p+p MOSFET” Aug. 1998, IEEE Transactions on Electron Devices, pp. 1737-1744.
Ning, Tak H., “Self-Aligned Bipolar Transistor for High-Performance and Low-Power-Delay VLSI,” IEEE Transactions on Electron Devices, vol. ED-28, No. 9, pp. 1010-1013 (Sep. 1981).

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