Bipolar transistor

Details Bipolar transistor Bipolar transistor

2006-10-24

2006-10-24

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S197000, C257S565000, C257S552000, C257S566000, C257S571000, C257S577000, C257S593000, C257S590000, C257S586000

Reexamination Certificate

active

07126171

ABSTRACT:
A bipolar transistor of the present invention comprises a collector layer made of an n-type semiconductor and an emitter layer made of an n-type semiconductor provided on this collector layer. A gate layer for injecting p-type carriers (holes) into the emitter layer is provided on the emitter layer. A p-type carrier retaining layer is formed between the collector layer and the emitter layer. The p-type carrier retaining layer temporarily retains the p-type carriers that are injected from the gate layer into the emitter layer and diffused in the emitter layer and reach the p-type carrier retaining layer. The bipolar transistor has a structure whose performance is not influenced by sheet resistance of the base layer, and is able to exhibit a high current gain even in a high-frequency region.

REFERENCES:
patent: 5132764 (1992-07-01), Bayraktaroglu
patent: 6399971 (2002-06-01), Shigematsu et al.
patent: 6867477 (2005-03-01), Zheng et al.
patent: 2002-368005 (2002-12-01), None

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