Bipolar transistor

Details Bipolar transistor Bipolar transistor

2006-04-04

2006-04-04

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S596000, C257S607000

Reexamination Certificate

active

07023072

ABSTRACT:
In a bipolar transistor including a base layer made of SiGe, a non-doped SiGe layer and a non-doped Si layer are provided between the base layer and an emitter layer. The composition ratio of Ge in the emitter side of SiGe base layer is decreased with increasing proximity to the emitter side, and the composition ratio of Ge in the non-doped SiGe layer is made smaller than the composition ratio of Ge at the emitter layer-side end of the SiGe base layer. In this manner, restriction is put on the diffusion of boron from the base layer to the emitter side, and the base-emitter junction capacitance CBEreduced. Furthermore, the direct-current gain β can be improved by increasing the composition of Ge at the emitter end of the SiGe base layer to more than or equal to a predetermined value.

REFERENCES:
patent: 6552375 (2003-04-01), Swanson et al.
patent: 6680234 (2004-01-01), Hashimoto

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