Bipolar transistor

Details Bipolar transistor Bipolar transistor

2006-01-03

2006-01-03

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S575000, C257S557000

Reexamination Certificate

active

06982473

ABSTRACT:
At a surface region of an N−-type base region, surrounded by a P-type isolation region, a P+-type collector region, a P+-type emitter region, an N+-type base contact region, and an N-type rectifying region are formed. The N-type rectifying region straddles over the emitter region and the base contact region. The rectifying region has an impurity concentration higher than that of the base region, and lower than that of the base contact region. The forward voltage at the interface of the rectifying region and the emitter region is higher than the forward voltage at the interface of the base region and the emitter region. Therefore, the current from the emitter region flows to the collector region, and does not flow that much to the isolation region. By this, leakage current is small. Also, because the collector region does not surround the emitter region, the element size is small.

REFERENCES:
patent: 2004/0173875 (2004-09-01), Yamamoto et al.
patent: H10-270458 (1998-10-01), None

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