Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Patent
1993-03-09
1994-03-22
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
257579, 257575, H01L 2940, H01L 2972
Patent
active
052967328
ABSTRACT:
A bipolar transistor of the multi-emitter type which is provided with a large number of emitter diffusion layers formed in the two-dimensionally arranged state on a base diffusion layer of a substrate, a large number of emitter electrode films formed respectively correspondingly on the emitter diffusion layers, a base electrode film formed on the base diffusion layer, and a collector electrode film formed on the substrate, and the transistor is further provided with a wiring film commonly connected to the large number of emitter electrode films except at least one of the emitter electrode films.
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Imaeda Yasuo
Iwata Hitoshi
Jinkai Koichi
Kabushiki Kaisha Tokai Rika Denki Seisakusho
LaRoche Eugene R.
Nguyen Viet Q.
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