Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2008-01-15
2008-01-15
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C438S235000, C438S309000
Reexamination Certificate
active
07319251
ABSTRACT:
A bipolar transistor formed in a substrate includes a collector, a base layer above the collector, where the base layer includes a base that is monocrystalline, and an emitter layer that is monocrystalline and above the base, where the emitter layer includes silicon or silicon-germanium. An intermediate layer is above the base layer and below the emitter layer. The intermediate layer includes silicon carbide. The intermediate layer is grown epitaxially and is etchable in a dry plasma relative to the emitter layer.
REFERENCES:
patent: 4135954 (1979-01-01), Chang et al.
patent: 5144398 (1992-09-01), Morishita
patent: 5338416 (1994-08-01), Mlcak et al.
patent: 5343064 (1994-08-01), Spangler et al.
patent: 5648294 (1997-07-01), Bayraktaroglu
patent: 6114745 (2000-09-01), Fang et al.
patent: 6362065 (2002-03-01), Swanson et al.
patent: 6642553 (2003-11-01), Drews et al.
patent: 19845789 (2000-03-01), None
patent: 10104776 (2002-08-01), None
patent: 0000327 (1979-01-01), None
patent: 0375965 (1990-07-01), None
patent: 0740351 (1996-10-01), None
patent: 02001933 (1990-01-01), None
Translation of International Preliminary Examination Report for Application No. PCT/EP2003/014339.
Behammer et al., “Low Temperature Ultra-Scalled fully self-aligned transistor technology (LOTUS) for SiGe-HBTs,” High speed semiconductor devices and circuits, 1995, pp. 142-151, ISBN: 0-7803-2442-0, XP010154225.
“Selective Germanium-etch Emitter Opening,” IBM Bulletin, Bd. 35, Nr. 3, Aug. 1, 1992, pp. 428-431, ISSN: 0018-8689, XP000326331.
German Examination Report for DE 103 08 870.9.
Minixhofer Rainer
Roehrer Georg
austriamicrosystems AG
Fish & Richardson P.C.
Menz Douglas M.
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