Bipolar transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

Reexamination Certificate

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C438S235000, C438S309000

Reexamination Certificate

active

07319251

ABSTRACT:
A bipolar transistor formed in a substrate includes a collector, a base layer above the collector, where the base layer includes a base that is monocrystalline, and an emitter layer that is monocrystalline and above the base, where the emitter layer includes silicon or silicon-germanium. An intermediate layer is above the base layer and below the emitter layer. The intermediate layer includes silicon carbide. The intermediate layer is grown epitaxially and is etchable in a dry plasma relative to the emitter layer.

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Behammer et al., “Low Temperature Ultra-Scalled fully self-aligned transistor technology (LOTUS) for SiGe-HBTs,” High speed semiconductor devices and circuits, 1995, pp. 142-151, ISBN: 0-7803-2442-0, XP010154225.
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