Bipolar transistor

Details Bipolar transistor Bipolar transistor

2011-04-12

2011-04-12

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257SE29188

Reexamination Certificate

active

07923754

ABSTRACT:
A bipolar transistor (1) comprising a subcollector layer (3), a collector layer (4, 5), a base layer (6) and an emitter layer (7) which are successively built up and having: the subcollector layer (3) formed with a projection (3A) and recesses (3B), an upper part above the projection constituting an intrinsic transistor region (1A) of the bipolar transistor; insulator layer (10) buried between the recesses of the subcollector layer and the collector layer (4); a boundary interface between the subcollector layer and the collector layer held between the insulator layers; the base layer (6) made of a single crystal layer and provided with a base electrode (12) on a region becoming an extrinsic base layer (6B) of the base layer; and the subcollector layer provided with a collector electrode (11). The bipolar transistor has advantages of its emitter made finer in width, a reduced parasitic capacitance between its base and collector and improved high-frequency characteristics.

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Translation of PCT/ISA/237 of PCT/JP2006/322875 with IB338 and IB373.
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