Bipolar transistor

Details Bipolar transistor Bipolar transistor

1991-04-29

1993-02-16

Carroll, J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

257587, 257621, 257624, 257774, H01L 2972, H01L 2906, H01L 2348

Patent

active

051875543

ABSTRACT:
A bipolar transistor in which a buried collector region, a base region and an emitter region are formed in a device forming region surrounded by an isolation region and in which a base contact electrode and a collector contact electrode are arranged in symmetry with each other, and a process for preparing the transistor. The collector contact electrode is formed through an opening formed in a portion of the isolation region for connection with the buried collector region. In this manner, the collision between the base region and the collector contact region may be avoided effectively.

REFERENCES:
patent: 3534234 (1970-10-01), Clevenger
patent: 4252581 (1981-02-01), Anantha et al.
patent: 4642883 (1987-02-01), Sakurai et al.
patent: 4705599 (1987-11-01), Suda et al.
patent: 4733287 (1988-03-01), Bower
IBM Technical Disclosure Bulletin, vol. 24, No. 9, Feb. 1982, "Bltra Dense, High Performance Bipolar Transistor"; pp. 4662-4664.

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