Bipolar switching transistor using a Schottky diode clamp

Details Bipolar switching transistor using a Schottky diode clamp Bipolar switching transistor using a Schottky diode clamp

1976-06-25

1977-07-19

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307237, 307254, 307317A, H03K 1940, H03K 508

Patent

active

040371158

ABSTRACT:
A transistor-transistor logic gate is described which uses a number of bipolar switching transistors clamped in several different ways. In particular to better adapt a bipolar switching transistor to high frequency, high temperature operation, the collectors of the various switching transistors are clamped in a variety of novel ways, each to achieve a collector voltage higher than that normally achieved by the conventional Schottky diode clamp connected between the base and collector.

REFERENCES:
patent: 3515899 (1970-06-01), May
patent: 3555294 (1971-01-01), Treadway
patent: 3766406 (1976-10-01), Bryant et al.

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