Bipolar structure with two base-emitter junctions in the...

Details Bipolar structure with two base-emitter junctions in the... Bipolar structure with two base-emitter junctions in the...

2008-03-25

2008-03-25

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Complementary bipolar transistors

C438S327000

Reexamination Certificate

active

11041845

ABSTRACT:
Bipolar integrated circuits employing SiGe technology incorporate the provision of mask-selectable types of bipolar transistors. A high-performance/high variability type has a thin base in which the diffusion from the emitter intersects the base dopant diffusion within the “ramp” of Ge concentration near the base-collector junction and a lower performance/lower variability type has an additional epi layer in the base so that the emitter diffusion intersects the Ge ramp where the ramp has lower ramp rate.

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patent: 2002/0070410 (2002-06-01), Freeman et al.
patent: 2004/0084692 (2004-05-01), Ning

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