Bipolar structure with two base-emitter junctions in the...

Details Bipolar structure with two base-emitter junctions in the... Bipolar structure with two base-emitter junctions in the...

2005-03-08

2005-03-08

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S020000, C257S027000, C257S076000, C257S183000

Reexamination Certificate

active

06864517

ABSTRACT:
Bipolar integrated circuits employing SiGe technology incorporate the provision of mask-selectable types of bipolar transistors. A high-performance/high variability type has a thin base in which the diffusion from the emitter intersects the base dopant diffusion within the “ramp” of Ge concentration near the base-collector junction and a lower performance/lower variability type has an additional epi layer in the base so that the emitter diffusion intersects the Ge ramp where the ramp has a lower ramp rate.

REFERENCES:
patent: 5834800 (1998-11-01), Jalali-Farahani et al.
patent: 6222249 (2001-04-01), Osborne et al.
patent: 6346453 (2002-02-01), Kovacic et al.
patent: 6750483 (2004-06-01), Klein et al.
patent: 20020070410 (2002-06-01), Freeman et al.
patent: 20040084692 (2004-05-01), Ning

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