Bipolar static induction transistor

Details Bipolar static induction transistor Bipolar static induction transistor

1992-10-30

1994-07-19

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Punchthrough structure device

Punchthrough region fully depleted at zero external applied...

257197, 257364, 257378, 257379, 257539, 257577, H01L 2972

Patent

active

053311949

ABSTRACT:
In a bipolar static induction transistor (BSIT) with increased input impedance, gate-voltage control is used for switching operations. The BSIT includes a collector region, a base region, an emitter region, and a source region in the base region. For enhanced turn-off, an auxiliary base region is included; alternatively, a drain region is provided in the base region.

REFERENCES:
patent: 5045909 (1991-09-01), Lucek et al.
patent: 5178370 (1993-01-01), Clark et al.
IEDM Technical Digest 1978, pp. 676-679.
Japanese Journal of Applied Physics 17 (1978), pp. 245-246.
IEEE Electron Device Letters EDL-6 (1985), pp. 522-524.
CMOS compatible 250 V Lateral Insulated Base Transistors, Narayanan et al. pp. 181-186, Engineering Dept., University of Cambridge.

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