Bipolar SRAM having word lines as vertically stacked pairs of co

Details Bipolar SRAM having word lines as vertically stacked pairs of co Bipolar SRAM having word lines as vertically stacked pairs of co

1990-05-15

1991-07-02

Moffitt, James W.

Static information storage and retrieval

Interconnection arrangements

365 51, 365179, 365155, 357 45, 357 236, G11C 1134

Patent

active

050291270

ABSTRACT:
There is implemented memory cells and corresponding signal lines associated therewith in bipolar type static random access memories employing wirings of multi-layer construction for transmitting a common signal therethrough such as with respect to the individual word lines. The word lines implemented are formed from at least a pair of stacked conductive layers and which layers have interposed therebetween an insulating film. The pair of layers form a pair of wiring lines wherein together they form a work line and wherein the wiring lines are, furthermore, interconnected at predetermined intervals along the lengths thereof. This leads to the ability to decrease the chip size of semiconductor integrated circuits noting that a decrease in the voltage drop of a signal line results, and to prevent electromigration in the signal (wiring) lines. There is, furthermore, implemented a current line formed from a conductor layer which is extended along the direction of the word lines over a region, together with the word lines, where the memory cells are formed.

REFERENCES:
patent: 3397393 (1968-08-01), Palmateer et al.
patent: 4638458 (1987-02-01), Itoh
patent: 4745580 (1988-05-01), Laymoun et al.
patent: 4809051 (1989-02-01), Kogan
patent: 4809052 (1989-02-01), Nishioka et al.
patent: 4827449 (1989-05-01), Inoue

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