Bipolar Silicon transistor with arsenic and phosphorous ratio

Details Bipolar Silicon transistor with arsenic and phosphorous ratio Bipolar Silicon transistor with arsenic and phosphorous ratio

1996-03-27

1999-10-12

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257578, 257590, 257591, 257593, 257919, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

059659297

ABSTRACT:
A bipolar silicon transistor includes at least one emitter zone with n.sup.+ arsenic doping and with a phosphorus doping. The ratio between arsenic dopant concentration and phosphorus dopant concentration is between 10:1 and 500:1 in the at least one emitter zone. The at least one emitter zone may also have a penetration depth of less than 0.5 .mu.m. A method for producing a bipolar silicon transistor includes implanting a n.sup.+ -doped emitter zone with arsenic, implanting the n.sup.+ -doped emitter zone with phosphorus, setting a ratio in the n.sup.+ -doped emitter zone between the arsenic dopant concentration and phosphorus dopant concentration to between 10:1 and 500:1, and annealing crystal defects.

REFERENCES:
patent: 4875085 (1989-10-01), Ueno et al.
patent: 5047357 (1991-09-01), Eklund
patent: 5150184 (1992-09-01), Eklund
Patent Abstracts of Japan 59087856 (Shinada), dated May 21, 1984.

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