Bipolar silicon-on-insulator transistor with increased breakdown

Details Bipolar silicon-on-insulator transistor with increased breakdown Bipolar silicon-on-insulator transistor with increased breakdown

1997-10-10

2000-03-28

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257526, 257560, 257565, H01L 2900, H01L 27082

Patent

active

060435550

ABSTRACT:
In a bipolar silicon-on-insulator transistor having a substrate having a major surface, an oxide layer on the major surface, a silicon layer of a first conductivity type on the oxide layer, a base region of a second conductivity type extending into the silicon layer, an emitter region of the first conductivity type extending into the base region, and a collector region of the first conductivity type extending into the silicon layer at a lateral distance from the base region, a plug region of the second conductivity type extends into the silicon layer up to the oxide layer on the opposite side of said emitter region relative to the collector region, a portion of the plug region extends laterally along the surface of the oxide layer under at least part of the emitter region towards the collector region at a distance from the base region, and the plug region is electrically connected to the base region.

REFERENCES:
patent: 4233618 (1980-11-01), Genesi
patent: 4345163 (1982-08-01), Davis et al.
patent: 4766482 (1988-08-01), Smeltzer et al.
patent: 4843448 (1989-06-01), Garcia et al.
patent: 4902633 (1990-02-01), Cambou
patent: 5083180 (1992-01-01), Miura et al.
patent: 5237193 (1993-08-01), Williams et al.
patent: 5512774 (1996-04-01), Nakagawa et al.
patent: 5659190 (1997-08-01), Litwin
T. Arnborg et al., "Analysis of New High-Voltage Bipolar Silicon-on-Insulator Transistor with Fully Depleted Collector," IEEE Transctions on Electron Devices, vol. 42, No. 1, pp. 172-177 (Jan. 1995).

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