Bipolar semiconductor switching device

Details Bipolar semiconductor switching device Bipolar semiconductor switching device

1989-12-06

1992-02-04

Prenty, Mark

357 234, 357 90, H01L 2974, H01L 2978

Patent

active

050863304

ABSTRACT:
A semiconductor substrate having a buffer region in one major surface with the buffer region having a opening portion of prescribed width and depth. An electrode region is in contact with the substrate through the opening portion and is short-circuited with the buffer region by a contact, so that the voltage breakdown characteristics of the device can be easily adjusted through the adjustment of the width and depth of the opening portion and so that the high speed switching and low "on" resistance characteristics can also be obtained.

REFERENCES:
patent: 4236169 (1980-11-01), Nakashima et al.
patent: 4511913 (1985-04-01), Nagano
patent: 4841345 (1989-06-01), Majumdar
Japan Electrical Society Technical Bulletin, Part II, No. 249, Jun. 1987, entitled "Trend of a Self-Arc-Suppressing Type Power Semiconductor Device", pp. 32-67.

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