Bipolar semiconductor power controlling devices with heterojunct

Details Bipolar semiconductor power controlling devices with heterojunct Bipolar semiconductor power controlling devices with heterojunct

1997-06-30

1999-04-13

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257139, 257152, 257155, 257163, H01L 29165, H01L 29745, H01L 29737

Patent

active

058941410

ABSTRACT:
Semiconductor bipolar power devices comprise a control electrode for turning on or off a first source of charge carriers into the device and a p-n junction emitter remote from the first source and acting in correspondence with the condition of the first source. The p-n junction is a heterojunction where the bandgap of the semiconductor material of the emitter side of the junction is less wide than the bandgap of the material on the base side for reducing the emitter injection efficiency in comparison with an otherwise identical device having a homojunction emitter.

REFERENCES:
patent: 3275906 (1966-09-01), Matsukura
patent: 5142641 (1992-08-01), Fujioka
patent: 5204871 (1993-04-01), Larkins

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