Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1997-02-06
1998-10-13
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257546, 257557, 257593, 257545, H01L 2360
Patent
active
058216014
ABSTRACT:
A bipolar semiconductor integrated circuit has a pnp transistor through which a DC power is supplied from an external DC power to various elements of the bipolar IC and a constant current circuit for turning the pnp transistor on and regulating the base current of the pnp transistor to a constant level causing operation in the saturation range of the pnp transistor.
REFERENCES:
patent: 5151767 (1992-09-01), Wong
patent: 5604373 (1997-02-01), Susak et al.
Yamamoto Masahiro
Yasuda Yukio
Mitsubishi Denki & Kabushiki Kaisha
Whitehead Jr. Carl W.
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