Bipolar semiconductor devices with implanted recombination regio

Details Bipolar semiconductor devices with implanted recombination regio Bipolar semiconductor devices with implanted recombination regio

1986-02-04

1988-06-28

Edlow, Martin H.

357 34, 357 36, 357 38, 357 55, H01L 2972, H01L 2974, H01L 2906, H01L 29167

Patent

active

047543159

ABSTRACT:
A bipolar semiconductor device with interdigitated emitter and base regions has a sub-region of the base, which has a shorter carrier recombination time than the major part of the base region due to the presence of argon ion implantation induced carrier recombination centers. The sub-region of the base is located centrally with respect to the emitter region to intercept the transient current lines during device turn-off and so to promote collapse of the transient current and the avoidance of second breakdown of the device. The centrally located sub-region of the base is remote from the emitter region edges to collector region current flow when the device is on. The ions may be implanted at energies between 50 keV and 3 MeV and at doses between 10.sup.11 ions cm.sup.-2 and 10.sup.14 ions cm.sup.-2. The implanatation mask may be provided by photolithographically processed resist having a thickness between 0.5 .mu.m and 4 .mu.m dependant on the ion implantation energy. The depth of the sub region and the concentration of recombination centers within the sub-region may be varied by altering the implantation conditions to tailor the effect of the sub-region to the likelihood of the onset of second breakdown at any part of a device structure. The invention is particularly of use in transistors, and in thyristors.

REFERENCES:
patent: 3421057 (1969-01-01), Bilous et al.
patent: 3821784 (1974-06-01), Heald et al.
patent: 4035670 (1977-07-01), Roman
patent: 4559551 (1985-12-01), Nakagawa

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