Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-02-19
1999-07-13
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257584, 257586, 257587, H01L 310328
Patent
active
059230576
ABSTRACT:
A method for fabricating a bipolar device, including the steps of forming an epitaxial growth retarding layer on a substrate at a predetermined angle, forming a collector layer on the substrate so that the collector layer is adjacent the epitaxial growth retarding layer and has an inclined portion formed over an edge portion of the epitaxial growth retarding layer, forming a base layer having an inclined portion on the collector layer, and forming an emitter layer on the inclined portion of the base layer.
REFERENCES:
patent: 4483726 (1984-11-01), Issac et al.
patent: 4775882 (1988-10-01), Miller et al.
patent: 4896203 (1990-01-01), Kajikawa
patent: 5266818 (1993-11-01), Tsuda et al.
patent: 5332912 (1994-07-01), Nozu et al.
patent: 5374846 (1994-12-01), Takemura
patent: 5412233 (1995-05-01), Dubon-Chevallier et al.
patent: 5629556 (1997-05-01), Johnson
patent: 5648666 (1997-07-01), Tran et al.
Internatinal Electron Devices meeting, The Technical Digest, Dec. 13-16, 1992; pp. 4.4.1-4.4.4.
Bui Huy
Hardy David B.
LG Semicon Co. Ltd.
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