Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1996-06-26
1998-06-09
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
257487, H01L 27082
Patent
active
057639353
ABSTRACT:
The bipolar semiconductor device fabricated according to the present invention have high CB junction breakdown voltage (BV.sub.CBO), small capacitance between collector and base and high response speed. A n.sup.+ type well diffused layer 105 to be a base for vertical type transistor is formed to reach to a p.sup.+ type buried region 104. Further, a p.sup.+ type diffused layer 106 is formed to reach to the p.sup.+ type buried region 104 and to surround the n.sup.+ type well diffused layer 105 at intervals of the distance (d). The product NA(104).times.ND(105) is adjusted to become larger then the product NA(106).times.ND(102) wherein NA(104) is an impurity concentration of said buried layer (104) of said first conductive type to be a collector; NA(106) is an impurity concentration of said diffusion region (106) to be a collector electrode; ND(102) is an impurity concentration of said epitaxial layer (102) of said second conductive type; ND(105) is an impurity concentration of said well region (105) of said second conductive type to be a base for transistor.
REFERENCES:
A.S. Grove, "Physics and Technology of Semiconductor Devices," John Wiley & Sons, (1967) p. 159, Dec. 1967.
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
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