Bipolar resonant tunneling transistor frequency multiplier

Details Bipolar resonant tunneling transistor frequency multiplier Bipolar resonant tunneling transistor frequency multiplier

1997-01-07

1998-06-16

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 23, 257 25, 257197, 257198, H01L 2906, H01L 310238, H01L 310336

Patent

active

057675260

ABSTRACT:
A solid-state frequency multiplier circuit (10) is provided which includes a bipolar quantum-well resonant tunneling transistor (12), a resistive load (14), and an A.C. output coupling capacitor (16), all which may be formed in a single integrated circuit or as discrete components. The value of the resistive load (14) determines the frequency multiplication factor of the circuit (10), and can produce frequencies in a range from about 2 GHz to over 20 GHz. A different embodiment of the present invention provides a frequency multiplication circuit (20) which generates a sinusoidal output waveform, without using an output A.C. coupling capacitor.

REFERENCES:
patent: 4902912 (1990-02-01), Capasso et al.
patent: 5130763 (1992-07-01), Delhaye et al.
patent: 5283448 (1994-02-01), Baykartaroglu
patent: 5554860 (1996-09-01), Seabaugh

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