Bipolar resonant tunneling transistor

Details Bipolar resonant tunneling transistor Bipolar resonant tunneling transistor

1995-06-07

1997-02-25

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 24, 257197, 257201, 257615, H01L 2906

Patent

active

056061781

ABSTRACT:
Base contacts are made to one or both barrier layers of a resonant tunneling bipolar transistor, rather than to the quantum well. This is made possible with the use of a type II rather than a type I energy band alignment in the active region.

REFERENCES:
patent: 5489786 (1996-02-01), Chow et al.
B. Jogal and K.L. Wang, "Dependence of tunneling current on structural variations of superlattice devices", Applied Physics Letter, vol. 46, 1985, pp. 167-168.
J.N. Schulman and M. Waldner, "Analysis of second level resonant tunneling diodes and transistors", Journal of Applied Physics, vol. 63, 1988, pp. 2859-2861.
M.A. Reed et al., "Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor", Applied Physics Letter, vol. 54, 1989, pp. 1034-1036.

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