Bipolar read-only-memory unit having self-isolating bit-lines

Details Bipolar read-only-memory unit having self-isolating bit-lines Bipolar read-only-memory unit having self-isolating bit-lines

1976-09-20

1978-07-04

Hecker, Stuart N.

Static information storage and retrieval

Read only systems

Semiconductive

357 15, G11C 1706

Patent

active

040992608

ABSTRACT:
A semiconductor read-only-memory (ROM) unit fabricated in large-scale-integrated form utilizing the formation of self-isolating bit-line surface regions of one conductivity type directly in a bulk region of the opposite conductivity type. Channel-stop regions of the same conductivity type as the bulk region are formed in the spaces between bit-line regions. Metallic word-lines overlying and orthogonal to the bit-line regions are formed, separated from the bit-line regions by an insulating layer. The memory cell comprises a single Schottky diode. Such a diode is made or not at each word-line/bit-line crossover location depending respectively on whether or not an aperture is formed in the insulating layer during fabrication to permit the word-line to contact a lightly doped portion of the bit-line. ROM units formed by this method are characterized by small area, high speed, low power dissipation and low cost.

REFERENCES:
patent: 3774170 (1973-11-01), Koch
Crowder et al., Silicon Schottky Barrier Bistable Memory Element, IBM Technical Disclosure Bulletin, vol. 15, No. 3, 8/72, p. 891.
Panovsis et al., GIMIC-O-A Low Cost Non-Epitaxial Bipolar LSI Technology Suitable for Application to TTL Circuits, IEDM Digest of Technical Papers, 12/74, pp. 515-518.
Broom et al., Vertical Schottky Diode-Memory Device, IBM Technical Disclosure Bulletin, vol. 15, No. 7, 12/72, p. 2158.

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