Bipolar PROM having transistors with reduced base widths

Details Bipolar PROM having transistors with reduced base widths Bipolar PROM having transistors with reduced base widths

1986-11-12

1989-02-14

Hecker, Stuart N.

Static information storage and retrieval

Read only systems

Fusible

365105, 365174, 357 46, 357 20, 357 48, G11C 1700, H01L 2702

Patent

active

048051411

ABSTRACT:
A semiconductor device having a vertical transistor consisting of a semiconductor substrate, a first semiconductor region, and a second semiconductor region operatively functioning as a collector, a base, and an emitter of a transistor. By providing a high concentration region in the first semiconductor region, the base width of the transistor is narrowed. In a PROM, a reverse current preventing transistor with such a narrowed base width in each memory cell can be driven by a decoder/driver with a lowered driving power consumption.

REFERENCES:
patent: 3450961 (1969-06-01), Tsai
patent: 3913123 (1975-10-01), Masaki
patent: 4081697 (1978-03-01), Nakano
patent: 4287569 (1981-09-01), Fukushima
patent: 4599635 (1986-07-01), Itoh et al.
patent: 4654688 (1987-03-01), Fukushima

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