Bipolar prom

Details Bipolar prom Bipolar prom

1981-07-13

1984-01-03

Stellar, George G.

Static information storage and retrieval

Read only systems

Semiconductive

357 51, 357 59, G11C 1140, G11C 1700

Patent

active

044245785

ABSTRACT:
A semiconductor memory device has memory cells, each including an emitter region formed in a base region as a bit line, a barrier layer formed in a hole formed in the oxide layer to be in contact the emitter region, a high resistance layer formed thereon, and a metal wiring layer as a word line in contact with the high resistance layer. By applying a voltage between the bit line and the word line, the metal wiring layer melts the part where both these lines cross, punches through the high resistance layer, and reaches the barrier layer, thus short-circuiting both these lines and accomplishing writing.

REFERENCES:
patent: 3570114 (1971-03-01), Tsaug
patent: 3717852 (1973-02-01), Abbas et al.
patent: 3980505 (1976-09-01), Buckley
patent: 4146902 (1979-03-01), Tanimoto et al.
"Study on Cell Structure of P-ROM Using Polysilicon Resistor," Proceedings of 1979 Meeting, Semiconductor Material Department of the Japan Electronic Communication Institute, p. 130.

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