Bipolar process for forming shallow NPN emitters

Details Bipolar process for forming shallow NPN emitters Bipolar process for forming shallow NPN emitters

1989-01-24

1989-10-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 59, 437160, 437162, 437192, 437228, 437 41, H01L 2174, H01L 21265

Patent

active

048777480

ABSTRACT:
A method for forming a BICMOS device having MOS devices and bipolar devices formed during the same process includes the steps of first forming bipolar and MOS regions and then patterning gate electrodes in the MOS regions to define source/drain regions on either side thereof. A layer of oxide is formed over the bipolar transistor region which has an intrinsic base defined therein. The oxide is patterned to form an opening for an emitter and an opening for an extrinsic base, the opening separated by a layer of oxide. The refractory metal is then sputtered over the substrate and a silicide layer forms in the emitter and base regions of the bipolar transistor and the source/drain regions of the MOS transistors. The silicided layers are implanted with the refractory metal layer forming a mask on the sidewalls of the gate electrode of the MOS transistors and the portion of the refractory metal layer over the spacing oxide between the emitter and the base regions to mask the implanted impurities from the region in the silicon therebelow to provide a self-aligned process. The unreacted titanium is then removed and the impurities driven down to the substrate to define a metallurgical junction below the silicided layers.

REFERENCES:
patent: 3887993 (1975-06-01), Okada et al.
patent: 4735680 (1988-04-01), Yen
patent: 4742025 (1988-05-01), Ohyu et al.
patent: 4766086 (1988-08-01), Ohshima et al.
patent: 4772567 (1988-09-01), Hirao
patent: 4774204 (1988-09-01), Havemann
patent: 4777150 (1988-10-01), Demeuville et al.
patent: 4788160 (1988-11-01), Havemann et al.

Affiliated with

Also associated with

Rating

Bipolar process for forming shallow NPN emitters does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar process for forming shallow NPN emitters, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar process for forming shallow NPN emitters will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-625821