Bipolar power transistor with high collector breakdown voltage a

Details Bipolar power transistor with high collector breakdown voltage a Bipolar power transistor with high collector breakdown voltage a

1997-07-31

1999-08-17

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257607, 257655, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

059397691

ABSTRACT:
There is described a bipolar power transistor with high breakdown voltage, obtained in a heavily doped semiconductor substrate of the N type, over which a lightly doped N type layer, constituting a collector region of the transistor, is superimposed. The transistor has a base region comprising a heavily doped P type diffusion, which extends into the lightly doped N type layer from a top surface. The transistor further includes an emitter region constituted by a heavily doped N type diffusion extending from the top surface within said heavily doped P type diffusion. The heavily doped P type diffusion is obtained within a deep lightly doped P type diffusion, extending from said top surface into the lightly doped N type layer and formed with acceptor impurities of aluminum atoms.

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patent: 4805004 (1989-02-01), Gandolfi et al.
patent: 4975381 (1990-12-01), Taka et al.
patent: 5475245 (1995-12-01), Kudo et al.
Solid State Technology, vol. 19, Mar. 1976, Washington, U.S., pp. 29-32, A.H. Berman, "Glass Passivation Improves High Voltage Transistors".

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