Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1997-10-16
1999-12-07
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257579, 257580, 257582, H01L 27082, H01L 27102, H01L 2900, H01L 3111
Patent
active
05998855&
ABSTRACT:
A bipolar power transistor of interdigitated geometry having a buried P type base region, a buried N type emitter region, a P type base-contact region, an N type emitter-contact region, connected to an emitter electrode and an N type connection region disposed around the emitter-contact region. The emitter region is buried within the base region in such a way that the buried emitter region and the connection region delimit a P type screen region. The transistor further includes a biasing P type region in contact with the emitter electrode, which extends up to the screen region.
REFERENCES:
patent: 3740621 (1973-06-01), Carley
patent: 5408124 (1995-04-01), Palara
patent: 5557139 (1996-09-01), Palara
Mintel William
SGS--Thomson Microelectronics S.r.l.
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